general description product summary v ds @ t j,max 600v i dm 12a r ds(on),max < 1.4? q g,typ 12nc e oss @ 400v 1.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * i d limited by rated i d maximum junction-to-case d,f c/w c/w 1.2 1.5 maximum case-to-sink a - 0.5 0.7 derate above 25 c c units junction and storage temperature range p d 83 t c =25c c/w 45 55 maximum junction-to-ambient a,d power dissipation b w w/c mj 152 3* pulsed drain current c 3 avalanche current c t c =25c t c =100c continuous drain current repetitive avalanche energy c mosfet dv/dt ruggedness peak diode recovery dv/dt package type 30 maximum dv/dt single pulsed avalanche energy h 20 a 3 12 4.5 a mj ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and halogen free compliant ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, and telecom 100 v/ns parameter drain-source voltage AOD3C50 to-252 tape & reel i d 500 orderable part number form minimum order quantity gate-source voltage absolute maximum ratings t a =25c unless otherwise noted v units v 2500 -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds typical maximum thermal characteristics parameter 300 c g d s g s d g s d top view to-252 dpak bottom view AOD3C50 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD3C50
symbol min typ max units 500 600 bv dss / ?tj 0.4 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 4.1 5 v r ds(on) 1.1 1.4 ? g fs 2.5 s v sd 0.78 1 v i s 3 a i sm 12 a c iss 662 pf c oss 26 pf c o(er) 19 pf c o(tr) 35 pf c rss 9.7 pf r g 3 ? q g 12 25 nc q gs 3.4 nc q gd 4.4 nc t d(on) 21 ns t r 28 ns t d(off) 32 ns t f 21 ns t rr 260 ns q rr 2.3 m c gate-body leakage current v gs =10v, v ds =400v, i d =3a total gate charge gate source charge gate drain charge switching parameters m a v ds =400v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related i effective output capacitance, time related j v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 400v, f=1mhz v ds =0v, v gs =30v breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =500v, v gs =0v v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v i d =250a, v gs =0v, t j =150c electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v gs =10v, i d =2.2a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters static drain-source on-resistance reverse transfer capacitance i f =3a,di/dt=100a/ m s,v ds =100v turn-on rise time turn-on delaytime v ds =40v, i d =1.5a gate resistance f=1mhz body diode reverse recovery charge body diode reverse recovery time i f =3a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =250v, i d =3a, r g =25 w a. the value of r qja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. d. the r qja is the sum of the thermal impedance from junction to case r qjc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l=60mh, i as =2.25a, v dd =150v, r g =10 ?, starting t j =25c. i. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. j. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD3C50
typical electrical and thermal characteristics 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =2.2a v gs =10v 0 2 4 6 8 10 0 5 10 15 20 25 30 v ds (volts) figure 1: on-region characteristics i d (a) v gs =5.5v 6v 6.5v 10v 8v 7v 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 t j (c) figure 5: break down vs. junction temparature bv dss (normalized) 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD3C50
typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 q g (nc) figure 7: gate-charge characteristics v gs (volts) 1 10 100 1000 10000 0.1 1 10 100 1000 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =400v i d =3a 0 0.5 1 1.5 2 2.5 3 3.5 0 25 50 75 100 125 150 t case (c) figure 12: current de-rating (note f) current rating i d (a) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 0.5 1 1.5 2 2.5 0 100 200 300 400 500 v ds (volts) figure 9: coss stored energy eoss(uj) e oss 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 11: power de-rating (note b) power dissipation (w) 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD3C50
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 15: normalized maximum transient thermal impedance (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0 50 100 150 200 250 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to- ambient (note g) power (w) t j(max) =150c t a =25c 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 13: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note g) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD3C50
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD3C50
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